Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-06-26
2010-11-23
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S287000, C438S785000, C257SE21010
Reexamination Certificate
active
07838439
ABSTRACT:
A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.
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S. Toyoda et al, “Annealing-temperature dependence: Mechanism of Hf silicidation in HfO2gate insulators on Si by core-level photoemission spectroscopy”, 2006 American lnsitiute of Physics, Journal of Applied Physics 99, 014901 (2006), Published online Jan. 3, 2006, pp. 1-5.
S. Toyoda et al, “Crystallization in HfO2gate insulators with in situ annealing studied by valence-band photoemission and x-ray absorption spectroscopy”, 2005 American Institute of Physics, Journal of Applied Physics 97, 014507(2005), Published online May 5, 2005. pp. 1-4.
Guo-lin Liu
Ikeda Kazuto
Liu Ziyuan
Oshima Masaharu
Takahashi Haruhiko
Brown Valerie
Nguyen Ha Tran T
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Semiconductor Technology Academic Research Center
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