Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-08-02
1997-09-02
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438305, 438586, 438669, H01L 218234
Patent
active
056631030
ABSTRACT:
For manufacturing an insulated-gate field-effect transistor in a semiconductor device, a refractory metal film is formed over a semiconductor substrate with an insulating film being interposed therebetween. An insulated gate electrode is formed by patterning the refractory metal film and insulating film. After formation of source/drain regions in a surface portion of the substrate, using the insulated gate electrode as a mask, a poly-silicon film is formed extending to cover the surface portion of the substrate and the patterned refractory metal film of the gate electrode. The resulting structure is heated to convert at least that portion of the poly-silicon film which lies on the patterned refractory metal film to a silicide film portion. The thus formed silicide film portion is removed so that portions of the doped poly-silicon film are left on the source/drain regions in the surface portion of semiconductor substrate. These left portions of the doped poly-silicon film serve as source/drain electrodes.
REFERENCES:
patent: 4822754 (1989-04-01), Lynch et al.
patent: 5518960 (1996-05-01), Tsuchimoto
Iwasa Shoichi
Naganuma Takeshi
Chaudhari Chandra
Nippon Steel Corporation
Thomas Toniae M.
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