Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2006-12-05
2009-02-24
Deo, Duy-Vu (Department: 1792)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S027000, C216S037000, C216S067000, C347S040000, C347S054000, C347S068000, C347S070000, C347S071000, C347S094000, C361S700000
Reexamination Certificate
active
07494594
ABSTRACT:
An electrostatic actuator for increasing a swing (deflection angle) of a movable structure includes a laminate substrate in which a thin film silicon layer is formed on a silicon substrate through a buried insulating film and a torsion beam movable structure constructed with the thin film silicon layer. A potential difference is generated between a movable side comb-tooth electrode of the movable structure and a fixed side comb-tooth electrode disposed to face the movable side comb-tooth electrode to swing the movable structure. The fixed side comb-tooth electrode is formed in the inside of a through hole bored through the laminate substrate.
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Office Action dated Oct. 1, 2008 in corresponding Japanese patent application No. 2003-379087 (an English translation).
Nishikawa Hideaki
Onoda Kunihiro
Yoshioka Tetsuo
Angadi Maki
DENSO CORPORATION
Deo Duy-Vu
Posz Law Group , PLC
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