Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-01-10
2006-01-10
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S264000, C438S529000, C438S530000, C438S546000, C438S770000
Reexamination Certificate
active
06984590
ABSTRACT:
A method of manufacturing an EEPROM device is disclosed. An example method forms a screen oxide film on a semiconductor substrate, forms a first ion implantation mask defining a gate insulating film forming region on the screen oxide film, and performs a first ion implantation on the semiconductor substrate and the first ion implantation mask. The example method also performs a first annealing of the semiconductor substrate, removes the screen oxide film and the first ion implantation mask, and forms a gate oxide film on the semiconductor substrate. In addition, the example method forms a second ion implantation mask defining a gate insulating film forming region on the gate oxide film, performs a second ion implantation on the semiconductor substrate and the second ion implantation mask, performs a second annealing for the semiconductor substrate, removes the second ion implantation mask; and forms a tunnel oxide film on the gate oxide film.
REFERENCES:
patent: 4590665 (1986-05-01), Owens et al.
patent: 5208173 (1993-05-01), Yamada et al.
patent: 5538923 (1996-07-01), Gardner et al.
patent: 6555484 (2003-04-01), Ramkumar et al.
patent: 0 690 487 (1996-03-01), None
patent: 2001217329 (2001-08-01), None
Han Chang Hun
Kim Dong Oog
Baumeister B. William
Dongbu Anam Semiconductor Inc.
Fulk Steven J.
Hanley, Flight & Zimmerman
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