Method of manufacturing an adaptive AIGaN buffer layer

Details Method of manufacturing an adaptive AIGaN buffer layer Method of manufacturing an adaptive AIGaN buffer layer

2006-06-26

2009-02-03

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S046000, C438S093000, C438S172000, C257S194000, C257S195000, C257S196000, C257S472000

Reexamination Certificate

active

07485512

ABSTRACT:
A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.

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