Method of manufacturing a wiring layer in semiconductor device

Details Method of manufacturing a wiring layer in semiconductor device Method of manufacturing a wiring layer in semiconductor device

1996-11-27

2000-04-18

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438643, 438648, 438706, 408707, H01L 214763, H01L 21461

Patent

active

060514922

ABSTRACT:
A method of manufacturing a metal wiring layer in a semiconductor device, wherein an insulating layer is plasma treated before a tungsten nitride film is formed on the insulating layer. A metal, metal silicide or metal alloy thereafter being deposited over the tungsten nitride film.

REFERENCES:
patent: 5052339 (1991-10-01), Vakerlis et al.
patent: 5487923 (1996-01-01), Min et al.
patent: 5644166 (1997-07-01), Honeycutt et al.
patent: 5821620 (1998-10-01), Hong

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