Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-12
2006-12-12
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S272000, C438S589000
Reexamination Certificate
active
07148111
ABSTRACT:
A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
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Bencuya Izak
Chau Duc
Mo Brian Sze-Ki
Probst Dean E.
Sapp Steven
Fairchild Semiconductor Corporation
Gurley Lynne A.
Sani Babak S.
Townsend and Townsend / and Crew LLP
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