Method of manufacturing a trench MOSFET having trench...

Details Method of manufacturing a trench MOSFET having trench... Method of manufacturing a trench MOSFET having trench...

2010-07-19

2011-10-11

Dang, Phuc (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C257S328000

Reexamination Certificate

active

08034686

ABSTRACT:
An integrated configuration comprising trench MOSFET having trench contacts and trench Schottky rectifier having planar contacts is disclosed. The trench contacts for trench MOSFET provide a lower specific on-resistance. Besides, for trench gate connection, planar gate contact is employed in the present invention to avoid shortage issue between gate and drain in shallow trench gate. Besides, W plugs filled into both trench contacts and planar contacts enhance the metal step coverage capability.

REFERENCES:
patent: 5917216 (1999-06-01), Floyd et al.
patent: 7078781 (2006-07-01), Hatakeyama et al.
patent: 7436022 (2008-10-01), Bhalla et al.
patent: 7626231 (2009-12-01), Hsieh
patent: 2010/0140695 (2010-06-01), Yedinak et al.

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