Method of manufacturing a trench isolation region in a...

Details Method of manufacturing a trench isolation region in a... Method of manufacturing a trench isolation region in a...

2007-12-04

2007-12-04

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S224000, C438S296000, C438S426000, C438S437000, C438S738000

Reexamination Certificate

active

11028867

ABSTRACT:
A method of manufacturing a semiconductor device for preventing dielectric breakdown of gate electrodes attributable to needle-like protrusions caused inside a trench in the step of forming element isolation trench in which includes forming a silicon oxide film over a silicon nitride film as an etching mask for forming element isolation trenches, then cleaning the surface of a substrate with a hydrofluoric acid etching solution to lift off obstacles deposited over the surface of the silicon oxide film, before the step of patterning the silicon nitride film by using as a mask a photoresist film provided with an anti-reflection film therebelow.

REFERENCES:
patent: 5578518 (1996-11-01), Koike et al.
patent: 5910018 (1999-06-01), Jang
patent: 6331469 (2001-12-01), Park et al.
patent: 6372606 (2002-04-01), Oh
patent: 6784077 (2004-08-01), Lin et al.
patent: 2001/0031540 (2001-10-01), Lim et al.
patent: 2003/0027402 (2003-02-01), Hsu
patent: 2003/0038337 (2003-02-01), Kanamitsu et al.
patent: 63-002371 (1988-01-01), None
patent: 02-260660 (1990-10-01), None
patent: 2000-200878 (2000-07-01), None

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