Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-04-05
2011-04-05
Mai, Anh D (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S218000, C438S294000, C438S595000
Reexamination Certificate
active
07919380
ABSTRACT:
The present invention relates to a transistor in a semiconductor device and method of manufacturing the same. Trenches are formed in a semiconductor substrate at gate edges. Low-concentration impurity regions are then formed at the sidewalls and the bottoms of the trenches. High-concentration impurity regions are formed at the bottoms of the trenches in a depth shallower than the low-concentration impurity regions. Source/drain consisting of the low-concentration impurity regions and the high-concentration impurity regions are thus formed. Therefore, the size of the transistor can be reduced while securing a stabilized operating characteristic even at high voltage. It is thus possible to improve reliability of the circuit and the degree of integration in the device.
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Lowe Hauptman & Ham & Berner, LLP
Magna-Chip Semiconductor, Ltd.
Mai Anh D
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