Method of manufacturing a transistor

Details Method of manufacturing a transistor Method of manufacturing a transistor

2007-09-04

2007-09-04

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S231000, C438S232000, C438S300000, C438S305000, C438S306000

Reexamination Certificate

active

10898484

ABSTRACT:
A method of manufacturing a transistor according to some embodiments includes sequentially forming a dummy gate oxide layer and a dummy gate electrode on an active region of a semiconductor substrate, ion-implanting a first conductive impurity into source/drain regions to form first impurity regions, and ion-implanting the first conductive impurity to form second impurity regions that are overlapped by the first impurity regions. The method includes forming a pad polysilicon layer on the source/drain regions, sequentially removing the pad polysilicon layer and the dummy gate electrode from a gate region of the semiconductor substrate, annealing the semiconductor substrate, and ion-implanting a second conductive impurity to form a third impurity region in the gate region. The method includes removing the dummy gate oxide layer, forming a gate insulation layer, and forming a gate electrode on the gate region.

REFERENCES:
patent: 6265272 (2001-07-01), Chen
patent: 6319807 (2001-11-01), Yeh et al.
patent: 6348385 (2002-02-01), Cha et al.
patent: 6514827 (2003-02-01), Kim et al.
patent: 6677212 (2004-01-01), Yoshioka et al.
patent: 6875680 (2005-04-01), Park
patent: 6998318 (2006-02-01), Park
patent: 7018873 (2006-03-01), Dennard et al.
patent: 7026203 (2006-04-01), Lee
patent: 7064038 (2006-06-01), Kudo et al.
patent: 2002/0037619 (2002-03-01), Sugihara et al.
patent: 2002/0117698 (2002-08-01), Inumiya et al.
patent: 2003/0219953 (2003-11-01), Mayuzumi

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