Method of manufacturing a thinned gate electrode utilizing...

Details Method of manufacturing a thinned gate electrode utilizing... Method of manufacturing a thinned gate electrode utilizing...

2005-02-01

2005-02-01

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S689000

Reexamination Certificate

active

06849486

ABSTRACT:
The reduction of length of a gate electrode is suppressed in the process of thinning it. A hard mask (5a) is thinned and used to etch a gate electrode material film (4) to form a gate electrode. At this time, a resist mask (10) having an opening (11) over an active region (1) is formed; the resist mask (10) covers at least both ends in the length direction of the hard mask (5a) and exposes in the opening (11) at least the entirety of the part of the hard mask (5a) which lies right above the active region (1). The hard mask (5a) is thinned by etching using the resist mask (10) as a mask and therefore the hard mask (5a) is thinned in the part over the active region (1) without being shortened in the length direction. As a result, the gate electrode formed by using the thinned hard mask (5a) is not shortened in length.

REFERENCES:
Hua-Yu Liu, et al. “The Application of Alternating Phase-shifting Masks to 140 nm Gate Patterning (II): Mask Design and Manufacturing Tolerances” SPIE vol. 3334, 1998, pp. 2-14.

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