Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Patent
1997-10-29
2000-02-01
Booth, Richard
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
438162, 438163, 438166, 438940, H01L 2100
Patent
active
06019796&
ABSTRACT:
A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to light at the photolithography wavelength, but reflective or opaque at the laser wavelength. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided.
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Boyce James B.
Chua Christopher L.
Hack Michael G.
Lujan René A.
Mei Ping
Booth Richard
Chen Kent
Hack Jonathan
Small Jonathan A.
Xerox Corporation
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