Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-11-27
2007-11-27
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S197000, C438S706000, C438S733000, C438S745000, C257SE21051, C257SE21229, C257SE21245
Reexamination Certificate
active
11215140
ABSTRACT:
A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a conductive layer that are separated from each other, stripping a photoresist pattern to remove the conductive layer using a stripping composition and dissolving the conductive layer. The method of manufacturing a thin film transistor substrate is capable of improving an efficiency of manufacturing process of the thin film transistor substrate. In addition, the stripping composition is recycled.
REFERENCES:
patent: 5986729 (1999-11-01), Yamanaka et al.
patent: 6924865 (2005-08-01), Ohta et al.
patent: 7042545 (2006-05-01), Byun et al.
patent: 2005/0078233 (2005-04-01), Lim et al.
patent: 2006/0269849 (2006-11-01), Lee
patent: 2007/0020910 (2007-01-01), Park et al.
patent: 2007/0082432 (2007-04-01), Lee
Choung Jong-Hyun
Kim Shi-Yul
Park Hong-Sick
Shin Won-Suk
Cantor & Colburn LLP
Nhu David
Samsung Electronics Co,. Ltd.
LandOfFree
Method of manufacturing a thin film transistor substrate and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a thin film transistor substrate and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a thin film transistor substrate and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3824595