Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-03-08
2011-03-08
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C349S038000, C349S043000, C349S110000, C349S111000, C257SE21231, C257SE21232, C257SE21234, C257SE21235
Reexamination Certificate
active
07902006
ABSTRACT:
In manufacturing a thin film transistor array substrate, a passivation film is formed over the transistors. A first photoresist pattern is formed over the passivation film, with a first portion partially overlying at least one source/drain electrode of each transistor and overlying each pixel electrode region, and with a second portion thicker than the first portion. The passivation film is patterned using the first photoresist pattern as a mask. The first photoresist pattern's first portion is removed to form a second photoresist pattern which protrudes upward around the pixel electrode regions. A transparent conductive film is formed with recesses in the pixel electrode regions. A masking pattern is formed over the transparent film in each pixel electrode region, the masking pattern's top surface being below a top of the transparent film. The transparent film is patterned using the masking pattern as a mask to form the pixel electrodes.
REFERENCES:
patent: 2002/0021403 (2002-02-01), Kim et al.
patent: 2396048 (2004-06-01), None
patent: 2396242 (2004-06-01), None
Ahn Byeong-Jae
Bang Jung-Suk
Chin Hong-Kee
Kim Woong-Kwon
Lee Ho-Jun
Innovation Counsel LLP
Kusumakar Karen M
Lebentritt Michael S
Samsung Electronics Co,. Ltd.
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