Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-01-13
2009-06-02
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S158000, C438S633000, C257SE21700
Reexamination Certificate
active
07541225
ABSTRACT:
A method of manufacturing a thin film transistor array panel is provided, the method including forming a thin film transistor having a gate electrode, a source electrode, and a drain electrode on a substrate, forming a passivation layer on the source electrode and the drain electrode, forming a photoresist film on the passivation layer, selectively etching the passivation layer using the photoresist film as a mask, forming a conductive film, and removing the photoresist film along with the conductive film disposed on the photoresist film using a CMP (chemical mechanical polishing) process to form a pixel electrode being connected to the drain electrode.
REFERENCES:
patent: 5780326 (1998-07-01), Dennison et al.
patent: 7056834 (2006-06-01), Mei et al.
patent: 7145613 (2006-12-01), Zhang et al.
patent: 2004/0229466 (2004-11-01), Ishikawa et al.
Baek Bum-Ki
Kim Hyuk-Jin
Haynes and Boone LLP
Samsung Electronics Co,. Ltd.
Smoot Stephen W
LandOfFree
Method of manufacturing a thin film transistor array panel... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a thin film transistor array panel..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a thin film transistor array panel... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4113726