Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-08-09
2009-11-03
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21561
Reexamination Certificate
active
07611932
ABSTRACT:
A method of manufacturing a thin film transistor is provided. The method includes forming an amorphous silicon layer on a substrate, forming a source region, a drain region, and a region of a plurality of channels electrically interposed between the source region and the drain region by patterning the amorphous silicon layer, annealing a region of the channels, sequentially forming a gate oxide film and a gate electrode on a channel surface, and doping the source region and the drain region.
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Cho Hans S.
Jung Ji-sim
Noguchi Takashi
Xianyu Wenxu
Yin Huaxiang
Booth Richard A.
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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