Method of manufacturing a thin film transistor

Details Method of manufacturing a thin film transistor Method of manufacturing a thin film transistor

2007-03-20

2007-03-20

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S517000, C257S072000, C257SE21413

Reexamination Certificate

active

10904513

ABSTRACT:
A method of manufacturing a thin film transistor is described. A polysilicon island is formed over a substrate. A gate insulating layer is formed over the substrate to cover the polysilicin island. A gate is formed on the gate insulating layer above the polysilicon island. A passivation layer is formed over the substrate to cover the gate and the gate insulating layer. An ion implanting process is carried out to form a source/drain in the polysilicon island beside the gate, wherein a region between the source and the drain is a channel. After the first passivation layer is removed, a patterned dielectric layer is formed over the substrate, wherein the dielectric layer exposes a portion of the source/drain. A source/drain conductive layer is formed over the dielectric layer and is electrically connected to the source/drain.

REFERENCES:
patent: 5292675 (1994-03-01), Codama
patent: 5627084 (1997-05-01), Yamazaki et al.
patent: 6887745 (2005-05-01), Chen et al.
patent: 2002/0142525 (2002-10-01), Ohnuma
patent: 2003/0042559 (2003-03-01), Takemura et al.

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