Method of manufacturing a strained silicon on a SiGe on SOI...

Details Method of manufacturing a strained silicon on a SiGe on SOI... Method of manufacturing a strained silicon on a SiGe on SOI...

2006-04-18

2006-04-18

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S424000, C438S933000

Reexamination Certificate

active

07029964

ABSTRACT:
A semiconductor device with an undercut relaxed SiGe layer having voids beneath the SiGe layer. The voids may be filled with a dielectric such as SiO2. A strained Si layer may be epitaxially grown on the relaxed SiGe layer to combine the benefits of a defect-free strained Si surface and a silicon-on-insulator substrate. The relaxed SiGe layer may be relatively thin, with a thickness below the critical thickness. Thus, the structure accommodates shallow junctions, which exhibit reduced junction capacitance.

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