Method of manufacturing a SONOS device

Details Method of manufacturing a SONOS device Method of manufacturing a SONOS device

2005-12-22

2008-12-30

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S288000, C257S324000

Reexamination Certificate

active

07470592

ABSTRACT:
A SONOS device and a method of manufacturing the same is provided. A tunnel dielectric layer, a charge trap layer, and a charge blocking layer are formed on a semiconductor substrate, and the charge blocking layer is formed on the charge trap layer such that the charge blocking layer is relatively thicker at regions adjacent to or overlapping the source and the drain and relatively thinner at a region overlapping the channel region. A gate is then formed on the blocking layer.

REFERENCES:
patent: 7172938 (2007-02-01), Choi et al.
patent: 7190021 (2007-03-01), Kang
patent: 7345336 (2008-03-01), Jeon et al.
patent: 2005/0133849 (2005-06-01), Jeon et al.

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