Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Patent
1996-06-21
1999-06-29
Niebling, John F.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
438480, 25049221, H01L 21265, H01L 2176, H01J 37317
Patent
active
059181516
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
The present invention relates to a manufacturing method of a semiconductor substrate and an apparatus for manufacturing the same, and more particularly to a method for manufacturing a silicon-on-insulator (hereinafter referred to as SOI) type semiconductor substrate by implanting oxygen ions into a silicon substrate, and an apparatus for manufacturing the same.
BACKGROUND OF THE INVENTION
The formation of an insulation layer by implanting ions into a semiconductor substrate is a well-known technique as disclosed in Japanese Patent Publication No. 49-39233. In the past, as a method for implanting oxygen ions into a single crystal silicon substrate to form a silicon oxide film which is an electrically insulative material (hereinafter referred to as a buried oxide layer) in the substrate and form a single crystal silicon layer having a uniform thickness over an entire surface of the substrate on the buried oxide layer, the following methods have been known.
Japanese Patent Publication No. 62-12658 discloses a method of ion-implanting oxygen into a single crystal substrate kept at a temperature of 200.degree. C. or higher to result in a concentration which is as 1.5 times as large as an oxygen concentration (4.5.times.10.sup.22 ions/cm.sup.3) in a uniform insulation layer to form a discrete boundary between the buried oxide layer and the single crystal silicon layer on the surface. This method, however, has a defect in that the dislocation density in the single crystal silicon layer on the surface is 10.sup.5 /cm.sup.2 or higher.
JP-A-62-188239 and U.S. Pat. No. 4,676,841 disclose a method for forming a sharp boundary free from non-stoichiometric silicon dioxide at the boundary of the single crystal silicon layer and the buried oxide film by implanting oxygen ions into the silicon substrate at an energies of 100 to 400 KeV and a dose of 5.times.10.sup.17 to 5.times.10.sup.18 ions/cm.sup.2 and thermally processing it in an nitrogen atmosphere at a temperature of at least 1300.degree. C. for six hours to ten minutes. This method, however, has a defect in that the dislocation density in the single crystal silicon layer on the surface is 10.sup.3 /cm.sup.2 or higher and a continuous buried oxide film cannot be formed.
JP-A-64-17444 discloses a method for forming an oxide or nitride buried insulation layer by conducting multiple continuous implantations of oxygen or nitrogen ions into the silicon substrate at the same energy and at a dose of 1.5.times.10.sup.18 ions/cm.sup.2, and after each implantation, annealing the substrate at a temperature no lower than 800.degree. C. and no higher than a melting point of the substrate. This method, however, has a defect in that the dislocation density in the single crystal silicon layer on the surface is no higher than 10.sup.5 /cm.sup.2 but it is lower than 10.sup.3 /cm.sup.2.
JP-A-2-191357 discloses a method for preventing channeling in the oxygen ion implantation by implanting silicon ions at a dose of 10.sup.18 ions/cm.sup.2 to such a depth that the oxygen ion concentration exhibits 10.sup.21 ions/cm.sup.3 (shallower one of two) to make it amorphous and then implanting oxygen ions, and preventing the occurrence of crystal defect in a surface silicon layer which is induced by void holes or excess oxygen by reducing the void holes and excess oxygen by implanted silicon. However, this method has a defect in that the dislocation in the single crystal silicon layer on the surface rather increases due to the silicon atoms and the excess implanted silicon atoms generated in the lattices in the course of the formation reaction of the buried oxide film.
JP-A-3-240230 discloses a method for forming a thin surface single crystal silicon layer on a buried oxide film of a predetermined film thickness while preventing the generation of crystal defects by reducing the oxygen ion dose, by applying a first thermal process to a silicon substrate to which oxygen ions have been implanted at a first implantation energy, specifically applying the thermal process in a
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Hamaguchi Isao
Nakajima Tatsuo
Tachimori Masaharu
Yano Takayuki
Mulpuri S.
Niebling John F.
Nippon Steel Corporation
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