Method of manufacturing a semiconductor memory device

Details Method of manufacturing a semiconductor memory device Method of manufacturing a semiconductor memory device

1997-09-04

2000-01-18

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438248, H01L 218242

Patent

active

060157313

ABSTRACT:
The first element separation oxide film consisting of a plurality of line-shaped portions parallel to the bit line is formed on the surface of the P-type silicon substrate. The first and second trenches are formed in that portion of the P-type silicon substrate which is located between an adjacent pair of line-shaped portions of the first element separation oxide film such that both sides of the trenches come in contact with the first element separation oxide film. A sheath plate capacitor is formed in each of the trenches. The second element separation oxide film having a thickness less than that of the first element separation oxide film is formed on that portion of the surface of the P-type silicon substrate which is located between the first and second trenches.

REFERENCES:
patent: 4384399 (1983-05-01), Kuo
patent: 4422092 (1983-12-01), Guterman
patent: 4855953 (1989-08-01), Tsukamoto et al.
patent: 4894697 (1990-01-01), Chin et al.
patent: 4918502 (1990-04-01), Kaga et al.
patent: 5045489 (1991-09-01), Gill et al.
patent: 5237528 (1993-08-01), Sunami et al.
patent: 5258321 (1993-11-01), Shimizu et al.
patent: 5374580 (1994-12-01), Baglee et al.
patent: 5470777 (1995-11-01), Nagata et al.
Toru Kaga et al., IEEE Transactions on Electron Devices, dated Aug. 8, 1988, vol. 35, No. 8, "Half-V.sub.cc Sheath-Plate Capacitor DRAM Cell with Self-Aligned Buried Plate Wiring" pp. 1257-1263.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-562749