Method of manufacturing a semiconductor memory device...

Details Method of manufacturing a semiconductor memory device... Method of manufacturing a semiconductor memory device...

2007-07-24

2007-07-24

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S289000, C438S291000, C438S303000

Reexamination Certificate

active

11171710

ABSTRACT:
A semiconductor device comprises a plurality of gate structures formed on a substrate, a gate spacer formed on a sidewall of the gate structures, a semiconductor pattern formed on the substrate between the gate structures, a first impurity region and a second impurity region formed in the semiconductor pattern and at surface portions of the substrate, respectively, wherein the first and second impurity regions include a first conductive type impurity, and a channel doping region surrounding the first impurity region, wherein the channel doping region includes a second conductive type impurity.

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