Method of manufacturing a semiconductor memory device

Details Method of manufacturing a semiconductor memory device Method of manufacturing a semiconductor memory device

1999-09-24

2000-11-14

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, 438397, H01L 218242

Patent

active

061469424

ABSTRACT:
A lower electrode of a capacitor is provided on a semiconductor substrate. The lower electrode includes an axis portion and a horizontal portion. An upper electrode of the capacitor is provided above the semiconductor substrate to cover the outer surface of the axis portion and the outer surface of the horizontal portion.

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"Novel Stacked Capacitor Cell for 64Mb DRAM", by Wakamiya et al., VL Sympo., 1989, pp. 69-70.
"3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMS", by Ena et al., 1988 IEEE, pp. 592-595.

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