Method of manufacturing a semiconductor memory device

Details Method of manufacturing a semiconductor memory device Method of manufacturing a semiconductor memory device

1996-09-13

1998-04-07

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438279, H01L 21824

Patent

active

057364427

ABSTRACT:
In a method of manufacturing a semiconductor memory device, before an exposed portion of the element separating isolation film is subjected to etching according to the SAS technique, an isolation film is laminated on the entirety of laminated gate structure, and thereafter, the exposed portion of the element separating isolation film is removed by etching while protecting the side surface of the floating gate with the isolation film.

REFERENCES:
patent: 5019527 (1991-05-01), Ohshima et al.
patent: 5470773 (1995-11-01), Liu et al.
patent: 5552331 (1996-09-01), Hsu et al.
patent: 5568422 (1996-10-01), Fujiwara

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