Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2007-02-13
2007-02-13
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S096000, C257S103000
Reexamination Certificate
active
10719206
ABSTRACT:
When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.
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Asatsuma Tsunenori
Goto Osamu
Motoki Kensaku
Tamamura Koshi
Tojo Tsuyoshi
Crane Sara
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
Sumitomo Electric Industries Ltd.
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