Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-08-26
1999-08-03
Chang, Joni
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438253, H01L 218242
Patent
active
059337249
ABSTRACT:
A phase shifting mask is used for manufacturing a semiconductor integrated circuit device including a conductor pattern in which the line width of patterned conductor strips or the space between patterned conductor strips is not constant. For main transparent areas in the mask corresponding to the conductor pattern, auxiliary pattern segments are provided for compensating changes in the phase distribution of transmitted light caused by changes of the line width or the space. Alternately, the spaces between the conductor strips are adjusted to suppress the changes in the phase distribution of transmitted light. Whether the auxiliary pattern segments should have the phase shifting function is determined depending upon the disposition of the main transparent areas.
REFERENCES:
patent: 5455144 (1995-10-01), Okamoto et al.
patent: 5502001 (1996-03-01), Okamoto
patent: 5583069 (1996-12-01), Ahn et al.
Cho Songsu
Kaeriyama Toshiyuki
Kakizaki Takatoshi
Kawakita Keizo
Kumai Toshikazu
Chang Joni
Hitachi , Ltd.
Texas Instruments
LandOfFree
Method of manufacturing a semiconductor integrated circuit devic does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor integrated circuit devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor integrated circuit devic will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-859618