Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-05-05
2010-11-16
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S669000, C438S749000, C257SE21214, C257SE21316
Reexamination Certificate
active
07833905
ABSTRACT:
In forming five trenches buried with an intermediate conductive layer for connecting transfer MISFETs and driving MISFETs with vertical MISFETs formed thereover, in which the second and third trenches, and the first, fourth, and fifth trenches are formed separately by twice etching using first and second photoresist films as a mask. Since all the trenches can be formed at a good accuracy even in a case where the shortest distance between the first trench and the second or third trench, and the shortest distance between the second or third trench and the fourth trench is smaller than the resolution limit for the exposure light, the distance between each of the five trenches arranged in one identical memory cell can be reduced to be smaller than resolution limit for the exposure light.
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Chakihara Hiraku
Nishida Akio
Noguchi Mitsuhiro
Tadokoro Masahiro
Wada Naonori
Antonelli, Terry Stout & Kraus, LLP.
Dang Phuc T
Renesas Electronics Corp.
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