Method of manufacturing a semiconductor IC device

Details Method of manufacturing a semiconductor IC device Method of manufacturing a semiconductor IC device

1997-07-24

1999-08-31

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438660, H01L 2144

Patent

active

059465999

ABSTRACT:
An improved and new method for the formation of polycide used for the gate electrode or interconnect metallization in integrated circuit devices has been developed. Annealing of the polycide structure in nitrogen prior to subsequently depositing a layer of oxide by LPCVD processing using SiH.sub.2 Cl.sub.2 and N.sub.2 O prevents deleterious interaction of the patterned polycide structure with the deposited oxide layer and results in a highly manufacturable process having high yield.

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