Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-19
2005-04-19
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S303000, C438S305000, C438S595000, C257SE21435, C257SE21346
Reexamination Certificate
active
06881633
ABSTRACT:
Provided is a semiconductor device, comprising a gate electrode formed on a semiconductor substrate, source/drain diffusion layers formed on both sides of the gate electrode, a gate electrode side-wall on the side of the source/drain diffusion layer and a gate side-wall insulating film covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode and having an L-shaped/reversed L-shaped cross-sectional shape, and a semiconductor layer extending over the gate side-wall insulating film covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode.
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Kabushiki Kaisha Toshiba
Nelms David
Pillsbury & Winthrop LLP
Tran Mai-Huong
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