Method of manufacturing a semiconductor device with a...

Details Method of manufacturing a semiconductor device with a... Method of manufacturing a semiconductor device with a...

2007-07-03

2007-07-03

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21615

Reexamination Certificate

active

11016023

ABSTRACT:
A method of manufacturing a semiconductor device provides a semiconductor substrate with a gate and a number of source/drain regions on the semiconductor substrate. A layer containing a strain-inducing element is provided over the number of source/drain regions. The strain-inducing element is driven from the layer containing a strain-inducing element into the number of source/drain regions. A number of source/drains is formed in the number of source/drain regions.

REFERENCES:
patent: 4835112 (1989-05-01), Pfiester et al.
patent: 6326667 (2001-12-01), Sugiyama et al.
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6977400 (2005-12-01), Puchner et al.

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