Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-29
2008-07-29
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21621
Reexamination Certificate
active
07405130
ABSTRACT:
A silicon nitride film having a thickness of 3 nm or less is formed on the surfaces of a P-well and N-well, as well as on the upper and side surfaces of a gate electrode, in which the silicon nitride film can be formed, for example, by exposing the surface of the P-well and N-well, and the upper and side surfaces of the gate electrode to a nitrogen-gas-containing plasma using a magnetron RIE apparatus. Then, pocket layers, extension layers and source/drain layers are formed while leaving the silicon nitride film unremoved.
REFERENCES:
patent: 4744859 (1988-05-01), Hu et al.
patent: 5225360 (1993-07-01), Shim et al.
patent: 5923969 (1999-07-01), Oyamatsu
patent: 5933721 (1999-08-01), Hause et al.
patent: 6051471 (2000-04-01), Gardner et al.
patent: 6144071 (2000-11-01), Gardner et al.
patent: 6153476 (2000-11-01), Inaba et al.
patent: 6294797 (2001-09-01), Wu
patent: 6335252 (2002-01-01), Oishi et al.
patent: 6399453 (2002-06-01), Nagai et al.
patent: 6551941 (2003-04-01), Yang et al.
patent: 6596599 (2003-07-01), Guo
patent: 2001/0054725 (2001-12-01), Nagai et al.
patent: 10-233504 (1998-09-01), None
patent: 2000-114257 (2000-04-01), None
patent: 2001-085680 (2001-03-01), None
patent: 2001-267562 (2001-09-01), None
Japanese Office Action dated Oct. 16, 2007, issued in corresponding Japanese Application No. 2002-167637.
Prior Art Information List.
Japanese Office Action dated Feb. 19, 2008; issued in corresponding Japanese Application No. 2002-167637.
Fujitsu Limited
Geyer Scott B.
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Method of manufacturing a semiconductor device with a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device with a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device with a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2800110