Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-29
2008-07-29
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21621
Reexamination Certificate
active
11486294
ABSTRACT:
A silicon nitride film having a thickness of 3 nm or less is formed on the surfaces of a P-well and N-well, as well as on the upper and side surfaces of a gate electrode, in which the silicon nitride film can be formed, for example, by exposing the surface of the P-well and N-well, and the upper and side surfaces of the gate electrode to a nitrogen-gas-containing plasma using a magnetron RIE apparatus. Then, pocket layers, extension layers and source/drain layers are formed while leaving the silicon nitride film unremoved.
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Prior Art Information List.
Japanese Office Action dated Feb. 19, 2008; issued in corresponding Japanese Application No. 2002-167637.
Fujitsu Limited
Geyer Scott B.
Westerman, Hattori, Daniels & Adrian , LLP.
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