Method of manufacturing a semiconductor device with a...

Details Method of manufacturing a semiconductor device with a... Method of manufacturing a semiconductor device with a...

2007-02-06

2007-02-06

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000

Reexamination Certificate

active

11353990

ABSTRACT:
A SiO2film serving as a gate dielectric film is formed on a silicon substrate. A seed Si film is formed on the gate dielectric film. A thin SiGe film of a thickness of 50 nm or less is formed on the seed Si film at a temperature between 450° C. and 494° C., and a thin cap Si film of a thickness of 0.5 nm to 5 nm is continuously formed on the thin SiGe film at the same temperature.

REFERENCES:
patent: 4603471 (1986-08-01), Strain
patent: 5998289 (1999-12-01), Sagnes
patent: 6132806 (2000-10-01), Dutartre
patent: 6255149 (2001-07-01), Bensahel et al.
patent: 6373112 (2002-04-01), Murthy et al.
patent: 6744104 (2004-06-01), Aoki et al.
patent: 6855641 (2005-02-01), Ryu et al.
patent: 6927454 (2005-08-01), Chan et al.
patent: 2001/0053601 (2001-12-01), Mogami
patent: 2002/0098671 (2002-07-01), Cheong
patent: 2003/0049919 (2003-03-01), Yamamoto
patent: 2003/0183901 (2003-10-01), Kanda et al.
patent: 2004/0067631 (2004-04-01), Bu et al.
patent: 2004/0070421 (2004-04-01), Kapoor
patent: 11-031820 (1999-02-01), None
patent: 11-087708 (1999-03-01), None
patent: 2000-150669 (2000-05-01), None
patent: 2001-320045 (2001-11-01), None
patent: 2002-043566 (2002-02-01), None
patent: 2002-261047 (2002-09-01), None
patent: 2002-261274 (2002-09-01), None
patent: 2003-31806 (2003-01-01), None
patent: 2003-086798 (2003-03-01), None
patent: WO 9943024 (1999-08-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device with a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device with a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device with a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3844651