Method of manufacturing a semiconductor device which includes fo

Details Method of manufacturing a semiconductor device which includes fo Method of manufacturing a semiconductor device which includes fo

1998-06-29

2000-04-25

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438595, H01L 21336

Patent

active

060543558

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of forming a first film and a second film on a semiconductor substrate, selectively removing the second film, the first film and a top portion of the semiconductor substrate to form a first groove, burying a first insulator film in the first groove to form an isolation region, patterning the second film surrounded by the isolation region to form a dummy gate layer, doping the semiconductor substrate with an impurity using the dummy gate layer as a mask, forming a second insulator film on the semiconductor substrate surrounded by the dummy gate layer and the first insulator film, removing the dummy gate layer and the first film to form a second groove, forming a gate insulator film on the semiconductor substrate in the second groove, and forming a gate electrode on the gate insulator film in the second groove.

REFERENCES:
patent: 4753897 (1988-06-01), Lund et al.
patent: 5624866 (1997-04-01), Kim
patent: 5877066 (1999-03-01), Stolmeijer et al.
patent: 5879998 (1999-03-01), Krivokapic

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