Method of manufacturing a semiconductor device utilizing...

Details Method of manufacturing a semiconductor device utilizing... Method of manufacturing a semiconductor device utilizing...

2000-11-28

2002-05-21

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S635000, C438S720000

Reexamination Certificate

active

06391727

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention relates generally to a method of manufacturing a semiconductor device utilizing a gate dielectric film. More particularly, the present invention relates to a method of manufacturing a semiconductor device capable of improving a leakage current characteristic of a gate dielectric film, while increasing its dielectric constant, applied to a high-speed high-density logic device and an ultra high integration device of more than 1G DRAM class, which utilize a high dielectric material as a gate dielectric film.
2. Description of the Prior Art
In general, a gate dielectric film of DRAM devices presently mass-produced and of a logic device in a semiconductor device is used by growing SiO
2
by means of annealing process or rapid thermal process. As the design rule is scaled down, a SiO
2
gate dielectric film is scaled down to 25~30 Å being a limit to the tunneling effect. It is expected that the gate dielectric of 0.10 &mgr;m technology will result in 30~40 Å in thickness. Due to off-current by the tunneling of the gate dielectric film, however, there is a possibility that the static power consumption is increased and its operation performance is adversely affected. Particularly, in case of a memory device, a scheme to reduce a leakage current becomes an important issue. As a part of efforts to overcome this, a research for adopting a dielectric material having a high dielectric constant as a gate dielectric film has been carried out.
Recently, research for using dielectric materials such as TiO
2
, Al
2
O
3
, etc. as a gate dielectric film has been actively carried out. Al
2
O
3
has a dielectric constant of 8~15, which is larger about 2.5 times than the dielectric constant of a thermal oxide film, and has a good leakage current characteristic. However, there is a problem that Al
2
O
3
is utilized as a gate dielectric film since its dielectric constant is degraded depending on its thickness in controlling the thickness (Tox) of the effective oxide film to below 25~30 Å. Also, it is reported that TiO
2
has a high dielectric constant of 25~40. However, there is a problem that TiO
2
is utilized as a gate dielectric film since its leakage current characteristic is poor.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide a method of manufacturing a semiconductor device capable of improving a leakage current characteristic of a gate dielectric film, while increasing its dielectric constant, applied to a high-speed high-density logic device and an ultra high integration device of more than 1G DRAM class which utilize a high dielectric material as the gate dielectric film.
In order to accomplish the above object, a method of manufacturing a semiconductor device according to the present invention is characterized in that it comprises the steps of depositing a Ti
1−X
Al
X
N film on a semiconductor substrate; oxidizing the Ti
1−X
Al
X
N film by oxidization process to form a (Al
2
O
3
)
X
—(TiO
2
)
1−X
gate dielectric film; and forming a gate electrode on the (Al
2
O
3
)
X
—(TiO
2
)
1−X
gate dielectric film.


REFERENCES:
patent: 4397077 (1983-08-01), Derbenwick et al.
patent: 4895520 (1990-01-01), Berg
patent: 5106776 (1992-04-01), Shen et al.
patent: 5219778 (1993-06-01), Dennison et al.
patent: 5298436 (1994-03-01), Radosevich et al.
patent: 5300450 (1994-04-01), Shen et al.
patent: 5405796 (1995-04-01), Jones, Jr.
patent: 5679980 (1997-10-01), Summerfelt
patent: 5716875 (1998-02-01), Jones, Jr. et al.
patent: 5907780 (1999-05-01), Gilmer et al.
patent: 5923056 (1999-07-01), Lee et al.
patent: 5960270 (1999-09-01), Misra et al.
patent: 5998225 (1999-12-01), Crenshaw et al.
patent: 6010927 (2000-01-01), Jones, Jr. et al.
patent: 6066525 (2000-05-01), Liu et al.
patent: 6171970 (2002-01-01), Xing et al.
patent: 62-204567 (1987-09-01), None
Kim et al. “Anti-oxidation properties of TiAIN film prepared by plasma-assisted chemical vapor deposition and roles of A1”, Thin Solid Films, vol. 307, Issue: 1-2, pp. 113-119, Oct. 10, 1997.

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