Method of manufacturing a semiconductor device using trench isol

Details Method of manufacturing a semiconductor device using trench isol Method of manufacturing a semiconductor device using trench isol

1996-06-24

1998-11-03

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438430, H01L 21762

Patent

active

058307966

ABSTRACT:
The present invention discloses a method of manufacturing a semiconductor device, comprising the steps of: forming a transistor on a silicon substrate; forming a trench by etching a selected portion of the silicon substrate; and forming an interlayer insulating film on the resulting structure after forming said trench, thereby forming a device isolation film in the trench.

REFERENCES:
patent: 4661202 (1987-04-01), Ochii
patent: 4980306 (1990-12-01), Shimbo
patent: 5387540 (1995-02-01), Poom et al.

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