Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-09-06
2005-09-06
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S781000, C438S787000
Reexamination Certificate
active
06939749
ABSTRACT:
A process for fabricating a thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element which accelerates the crystallization of the silicon film, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities. Otherwise, the catalyst element can be incorporated into the structure by introducing it into the impurity region by means of ion implantation and the like. Also a process for fabricating a thin film transistor, which comprises forming a gate electrode, a gate insulating film, and an amorphous silicon film on a substrate, implanting impurities into the amorphous silicon film to form source and drain regions as the impurity regions, introducing a catalyst element into the impurity region by adhering a coating containing the catalyst element of by means of ion doping and the like, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities.
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Takayama Toru
Takemura Yasuhiko
Zhang Hongyong
Costelia Jeffrey L.
Gurley Lynne A.
Isaac Stanetta
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co. Ltd
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