Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-11
2005-10-11
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S232000, C438S301000
Reexamination Certificate
active
06953732
ABSTRACT:
A method of manufacturing a semiconductor device includes providing a semiconductor substrate, and then forming a gate insulating layer on the semiconductor substrate. A lower gate electrode layer and a cap gate layer are formed on the gate insulating layer. The lower gate electrode layer and the cap gate layer are patterned to form a gate electrode structure. An LDD region is formed on the semiconductor substrate. An oxide layer is formed on the gate electrode structure and the semiconductor substrate. A thickness of the oxide layer is greater than a thickness of the gate insulating layer. Next, a nitride layer is formed on the oxide layer. Finally, the oxide layer and the nitride layer are etched to form a nitride sidewall spacer on the gate electrode structure through the oxide layer.
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Tokitoh Shunichi
Yoshida Masahiro
Lebentritt Michael S.
Lindsay Jr. Walter L.
Oki Electric Industry Co. Ltd.
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