Method of manufacturing a semiconductor device including a...

Details Method of manufacturing a semiconductor device including a... Method of manufacturing a semiconductor device including a...

2009-08-11

2010-11-02

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C257SE21530

Reexamination Certificate

active

07824987

ABSTRACT:
A semiconductor device including a SRAM section and a logic circuit section includes: a first n-type MIS transistor including a first n-type gate electrode formed with a first gate insulating film interposed on a first element formation region of a semiconductor substrate in the SRAM section; and a second n-type MIS transistor including a second n-type gate electrode formed with a second gate insulating film interposed on a second element formation region of the semiconductor substrate in the logic circuit section. A first impurity concentration of a first n-type impurity in the first n-type gate electrode is lower than a second impurity concentration of a second n-type impurity in the second n-type gate electrode.

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