Method of manufacturing a semiconductor device, in which a negat

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430141, 430145, 430147, 430148, 430191, 430192, 430170, 430311, 430270, 430330, G03F 726

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049371762

ABSTRACT:
A method of manufacturing a semiconductor device, in which a layer of photolacquer (5) containing as a photoactive component a diazo oxide is provided on a semiconductor substrate. Of this layer, parts (9) are irradiated by a first patterned irradiation (7) and these parts are then rendered poorly developable by an intermediate treatment. Subsequently, the lacquer layer (5) is subjected to a second non-patterned irradiation (11) and is then developed. According to the invention, in the parts (9) irradiated by the first irradiation a pigment is formed, which absorbs radiation having a wavelength at which diazo oxide is photosensitive. The second irradiation is carried out with radiation of that wavelength. Thus, lacquer tracks having a rectangular profile can be obtained in a simple manner.

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