Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-12
2005-07-12
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
06916714
ABSTRACT:
A procedure of manufacturing a semiconductor device according to the present invention first creates a gate electrode on a center portion of a gate oxide film formed on a substrate, forms a silicon oxide film over the whole surface of the substrate including the gate electrode, and etches the whole face of the silicon oxide film, so as to form a side wall of the silicon oxide film on a side face of the gate electrode. The procedure then implants an impurity ion according to a channel of a target MOS transistor, so as to specify a drain area and a source area. In the process of specifying the drain area and the source area, a resist is formed in advance on at least a peripheral portion of the gate oxide film in a high-breakdown-voltage MOS transistor, so as to prevent implantation of the impurity ion in an under-layer region below the peripheral portion of the gate oxide film. This arrangement enables both a high-breakdown-voltage MOS transistor and a low-breakdown-voltage MOS transistor to be efficiently formed on an identical substrate without damaging the characteristics of the respective transistors.
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Haga Yasushi
Kanda Atsushi
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