Method of manufacturing a semiconductor device having wiring lay

Details Method of manufacturing a semiconductor device having wiring lay Method of manufacturing a semiconductor device having wiring lay

1995-08-30

1999-10-05

Dutton, Brian

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438154, 437 26, 437 24, 437203, 437228, H01L 2100, H01L 2184, H01L 2131, H01L 21469, H01L 21265, H01L 2144, H01L 2148, H01L 21465

Patent

active

059638389

ABSTRACT:
A transistor element is formed on the surface of a silicon substrate. A tunnel is formed in the silicon substrate at a position right under the transistor element. A contact hole is formed to extend from the surface of the silicon substrate to the contact hole. Silicon oxide films are respectively formed on the inner surfaces of the tunnel and the contact hole. A wiring layer is buried in the tunnel and the contact hole. The wiring layer is connected to a diffusion layer of the transistor element.

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