Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-03-11
2000-12-05
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438618, H01L 214763
Patent
active
061566365
ABSTRACT:
A method of forming self-aligned contact holes of a semiconductor device presents bridging from occurring between contacts formed in the holes. First, gate electrode structures are formed on a semiconductor substrate. Next, an interlayer insulating film is formed over the gate electrode structures. The interlayer insulating film is formed by forming a first oxide layer of a reflowable material over the semiconductor substrate and gate electrode structures, planarization etching the first oxide layer until the upper portions of the gate electrode structures are uncovered, and then forming a second oxide layer on the planarized upper surface of the first oxide layer. The second oxide layer is selected to have a wet etch rate that is lower than that of the first oxide layer. Then, the insulating film is etched to form a contact hole between gate electrode structures. Finally, a self-aligned contact electrically connected with the semiconductor substrate is formed by filling the contact hole with conductive material.
REFERENCES:
patent: 5155053 (1992-10-01), Atkinson
patent: 5849635 (1998-12-01), Akram et al.
patent: 5877092 (1999-03-01), Lee et al.
Lee Kyu-pil
Yeom Kye-Hee
Nelms David
Nhu David
Samsung Electronics Co,. Ltd.
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