Method of manufacturing a semiconductor device having at least t

Details Method of manufacturing a semiconductor device having at least t Method of manufacturing a semiconductor device having at least t

1995-06-28

1997-08-05

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438174, 438571, 438576, 438704, 438695, H01L 218252

Patent

active

056542143

ABSTRACT:
A method of manufacturing a semiconductor device comprising a buried channel field effect transistor, which method comprises the formation of a stack of layers on a substrate (1) with an active semiconductor layer (13, 14) having a non-zero aluminium (Al) content, a semiconductor cap layer (4) without aluminium (Al), a masking layer (100) provided with a gate opening (51); a first selective etching step by means of a fluorine (F) compound in the cap layer (4) down to the upper surface (22) of the active layer (13, 14) on which a stopper layer (3) of aluminum fluoride (AlF.sub.3) is automatically formed; removal of said stopper layer (3) and covering of the region of the first transistor (T) with a material (200) which can be removed without deterioration of the masking layer (100); a second, non-selective etching step in the active layer (13, 14) down to a depth (62E) equal to the difference (HE-HD) in depth between the gate recesses (52D, 52E) of the two transistors; removal of the covering material (200); and a third, non-selective etching step in the active layer (13, 14) simultaneously for the two transistors (D, E) down to the bottom level (42D) of the gate recess of the first transistor (D).

REFERENCES:
patent: 5023675 (1991-06-01), Ishikawa
patent: 5508535 (1996-04-01), Nakanishi
patent: 5514605 (1996-05-01), Asai et al.
patent: 5534452 (1996-07-01), Nakanishi et al.
patent: 5556797 (1996-09-01), Chi et al.

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