Method of manufacturing a semiconductor device having an oxide f

Details Method of manufacturing a semiconductor device having an oxide f Method of manufacturing a semiconductor device having an oxide f

1996-09-27

1998-07-28

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438906, 438703, H01L 21316

Patent

active

057862770

ABSTRACT:
On manufacturing a semiconductor device comprising a semiconductor substrate having a principal surface and an objective oxide film on the semiconductor substrate, the semiconductor substrate is subjected to a heat treatment in an oxidizing atmosphere for a predetermined time duration to form a provisional oxide film on the principal surface at a first step. Subsequently, at a second step, the provisional oxide film is removed to expose the semiconductor substrate as an exposed surface of the semiconductor substrate by placing in a reducing atmosphere the semiconductor substrate with the provisional oxide film formed on the semiconductor substrate. Thereafter, the objective oxide film is formed on the exposed surface of the semiconductor substrate. Preferably, the heat treatment is carried out in the oxidizing atmosphere of an oxygen-partial pressure not higher than 5% at a temperature not lower than 950.degree. C. for the predetermined time duration which is not shorter than fourty minutes. The reducing atmosphere may consist essentially of hydrogen. The first through the third steps may be carried out in a same furnace.

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