Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-03-02
2009-02-17
Dickey, Thomas L (Department: 2826)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21684
Reexamination Certificate
active
07491657
ABSTRACT:
Provided is an erasable and programmable read only memory (EPROM) device in which a plasma enhanced oxide (PEOX) film covers an upper surface of a floating gate in a single poly one time programmable (OTP) cell and a method of manufacturing a semiconductor device having the same. The semiconductor device comprises a substrate having an OTP cell region, on which a floating gate is formed for making an OTP cell transistor, and a main chip region, on which a gate of a transistor is formed. A PEOX film is formed on the OTP cell region and the main chip region. The PEOX film covers the floating gate in a close state and covers the gate by a predetermined distance. A silicon oxy nitride (SiON) film Is interposed between the gate and the PEOX film in the main chip region.
REFERENCES:
patent: 6420752 (2002-07-01), Ngo et al.
Lee Ki-Hyung
Yoo Seung-Han
Dickey Thomas L
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
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