Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-08-07
2011-10-25
Hu, Shouxiang (Department: 2811)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S487000, C438S781000, C257SE21127
Reexamination Certificate
active
08043977
ABSTRACT:
Provided is a semiconductor device containing a silicon single crystal substrate101, a silicon carbide layer102provided on a surface of the substrate, a Group III nitride semiconductor junction layer103provided in contact with the silicon carbide layer, and a superlattice-structured layer104constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGaYInzN1-αMα(0≦X, Y, Z≦1, X+Y+Z=1, 0≦α<1, M is a Group V element except nitrogen).
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Ohachi Tadashi
Udagawa Takashi
Hu Shouxiang
Showa Denko K.K.
Sughrue & Mion, PLLC
The Doshisha
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