Method of manufacturing a semiconductor device having a...

Details Method of manufacturing a semiconductor device having a... Method of manufacturing a semiconductor device having a...

2006-12-27

2009-06-23

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S435000, C438S792000, C257S632000, C257SE21576, C257SE21493, C257SE29015

Reexamination Certificate

active

07550397

ABSTRACT:
Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor device having a pre-metal dielectric liner. In embodiments, method for forming a semiconductor device may include forming a pre-metal dielectric liner, which has a multi-layer structure including a plurality of interfacial surfaces, on an entire surface of a semiconductor substrate formed with a transistor, and forming a boron phospho silicate glass (BPSG) oxide layer on the pre-metal dielectric liner. Since the pre-metal dielectric liner is formed in a multi-layer structure having a plurality of interfacial surfaces, boron (B) of an upper BPSG oxide layer is not penetrated into the semiconductor substrate.

REFERENCES:
patent: 6287951 (2001-09-01), Lucas et al.
patent: 7091088 (2006-08-01), Cheng et al.

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