Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-27
2007-02-27
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S585000, C438S592000, C257SE21092, C257SE21623, C257SE21637
Reexamination Certificate
active
11001334
ABSTRACT:
A method of manufacturing a semiconductor device includes implanting germanium ions into a selected portion of a semiconductor region containing at least silicon, forming P-type and N-type diffusion layers in the semiconductor region, and forming a suicide film which extends from the N type diffusion layer over to the boundary region and the P-type diffusion layer. A boundary region between the P-type and N-type diffusion layers is formed in the selected portion.
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Matsuda Satoshi
Ohuchi Kazuya
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